WO2007095579A3 - Writing to and configuring flash memory - Google Patents

Writing to and configuring flash memory Download PDF

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Publication number
WO2007095579A3
WO2007095579A3 PCT/US2007/062143 US2007062143W WO2007095579A3 WO 2007095579 A3 WO2007095579 A3 WO 2007095579A3 US 2007062143 W US2007062143 W US 2007062143W WO 2007095579 A3 WO2007095579 A3 WO 2007095579A3
Authority
WO
WIPO (PCT)
Prior art keywords
flash memory
writing
commands
flash
architecture
Prior art date
Application number
PCT/US2007/062143
Other languages
French (fr)
Other versions
WO2007095579A2 (en
Inventor
Frode Milch Pedersen
Marc Laurent
Original Assignee
Atmel Corp
Frode Milch Pedersen
Marc Laurent
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/353,874 external-priority patent/US7428610B2/en
Priority claimed from US11/353,873 external-priority patent/US7610528B2/en
Application filed by Atmel Corp, Frode Milch Pedersen, Marc Laurent filed Critical Atmel Corp
Priority to EP07756993A priority Critical patent/EP2016494A4/en
Publication of WO2007095579A2 publication Critical patent/WO2007095579A2/en
Publication of WO2007095579A3 publication Critical patent/WO2007095579A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0401—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals in embedded memories

Abstract

System for and method of writing to a flash memory (101) may include receiving two operand write commands (128) that are substantially independent of an internal architecture of the flash memory. The two operand write commands are translated into architecture-dependent flash commands (113). The Architecture-dependent flash commands are executed to fill a page buffer (110) associated with the flash memory; and subsequently contents of the page buffer are transferred to a page of flash memory. In addition, system (416) for configuring or testing a flash memory may cycle a memory array while substantially concurrently performing other functional testing using a serial interface (415).
PCT/US2007/062143 2006-02-14 2007-02-14 Writing to and configuring flash memory WO2007095579A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07756993A EP2016494A4 (en) 2006-02-14 2007-02-14 Writing to and configuring flash memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/353,874 2006-02-14
US11/353,873 2006-02-14
US11/353,874 US7428610B2 (en) 2006-02-14 2006-02-14 Writing to flash memory
US11/353,873 US7610528B2 (en) 2006-02-14 2006-02-14 Configuring flash memory

Publications (2)

Publication Number Publication Date
WO2007095579A2 WO2007095579A2 (en) 2007-08-23
WO2007095579A3 true WO2007095579A3 (en) 2008-12-04

Family

ID=38372239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/062143 WO2007095579A2 (en) 2006-02-14 2007-02-14 Writing to and configuring flash memory

Country Status (2)

Country Link
EP (1) EP2016494A4 (en)
WO (1) WO2007095579A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2539445A (en) * 2015-06-16 2016-12-21 Nordic Semiconductor Asa Data processing
CN116259347B (en) * 2023-05-16 2023-07-21 上海灵动微电子股份有限公司 Programming device of embedded flash memory based on SPI protocol

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297148A (en) * 1989-04-13 1994-03-22 Sundisk Corporation Flash eeprom system
US5974528A (en) * 1998-04-17 1999-10-26 Winbond Electronics Corp. Microcomputer with embedded flash memory having on-chip programming capability and method of programming data into the embedded flash memory
US6076177A (en) * 1997-09-23 2000-06-13 Motorola, Inc. Method and apparatus for testing a circuit module concurrently with a non-volatile memory operation in a multi-module data processing system
US6421757B1 (en) * 1998-09-30 2002-07-16 Conexant Systems, Inc Method and apparatus for controlling the programming and erasing of flash memory
US6510488B2 (en) * 2001-02-05 2003-01-21 M-Systems Flash Disk Pioneers Ltd. Method for fast wake-up of a flash memory system
US6839285B2 (en) * 1999-12-22 2005-01-04 Stmicroelectronics S.A. Page by page programmable flash memory
US6851013B1 (en) * 1999-12-15 2005-02-01 Intel Corporation Fast program mode
US6876591B2 (en) * 2001-04-25 2005-04-05 Koninklijke Philips Electronics N.V. Integrated circuit with self-test device for an embedded non-volatile memory and related test method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
US8429313B2 (en) * 2004-05-27 2013-04-23 Sandisk Technologies Inc. Configurable ready/busy control
US7882299B2 (en) * 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297148A (en) * 1989-04-13 1994-03-22 Sundisk Corporation Flash eeprom system
US6076177A (en) * 1997-09-23 2000-06-13 Motorola, Inc. Method and apparatus for testing a circuit module concurrently with a non-volatile memory operation in a multi-module data processing system
US5974528A (en) * 1998-04-17 1999-10-26 Winbond Electronics Corp. Microcomputer with embedded flash memory having on-chip programming capability and method of programming data into the embedded flash memory
US6421757B1 (en) * 1998-09-30 2002-07-16 Conexant Systems, Inc Method and apparatus for controlling the programming and erasing of flash memory
US6851013B1 (en) * 1999-12-15 2005-02-01 Intel Corporation Fast program mode
US6839285B2 (en) * 1999-12-22 2005-01-04 Stmicroelectronics S.A. Page by page programmable flash memory
US6510488B2 (en) * 2001-02-05 2003-01-21 M-Systems Flash Disk Pioneers Ltd. Method for fast wake-up of a flash memory system
US6876591B2 (en) * 2001-04-25 2005-04-05 Koninklijke Philips Electronics N.V. Integrated circuit with self-test device for an embedded non-volatile memory and related test method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2016494A4 *

Also Published As

Publication number Publication date
EP2016494A4 (en) 2010-02-03
WO2007095579A2 (en) 2007-08-23
EP2016494A2 (en) 2009-01-21

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